sud45p03-15 siliconix vishay-siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-57253erev. f, 24-feb-98 siliconix was formerly a division of temic semiconductors 1-51 p-channel 30-v (d-s), 150 c mosfet product summary v ds (v) r ds(on) ( ) i d (a) a 30 0.015 @ v gs = 10 v 13 30 0.024 @ v gs = 4.5 v 8 to-252 s gd top view drain connected to tab order number: sud45p03-15 s g d p-channel mosfet absolute maximum ratings ( t a = 25 c unless otherwise noted ) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current b t a = 25 c i d 13 continuous drain current b t a = 100 c i d 8 a pulsed drain current i dm 100 a continuous source current (diode conduction) i s 13 maximum power dissipation b t c = 25 c p d 70 w maximum power dissipation b t a = 25 c p d 4 a w operating junction and storage temperature range t j , t stg 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b r thja 30 c/w maximum junction-to-case r thjc 1.8 c/w notes a. calculated rating for t a = 25 c, for comparison purposes only. this cannot be used as continuous rating (see absolute maximum ratings and typical characteristics). b. surface mounted on fr4 board, t 10 sec. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70267.
siliconix sud45p03-15 vishay-siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-57253erev. f, 24-feb-98 siliconix was formerly a division of temic semiconductors 1-52 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 125 c 50 a on state drain current b i d( ) v ds = 5 v, v gs = 10 v 50 a on - state drain current b i d(on) v ds = 5 v, v gs = 4.5 v 20 a b v gs = 10 v, i d = 13 a 0.012 0.015 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 13 a, t j = 125 c 0.018 0.026 v gs = 4.5 v, i d = 13 a 0.020 0.024 forward transconductance b g fs v ds = 15 v, i d = 13 a 20 s dynamic a input capacitance c iss 3200 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 800 pf reverse transfer capacitance c rss 280 total gate charge c q g 50 125 gate-source charge c q gs v ds = 15 v, v gs = 10 v, i d = 45 a 14 nc gate-drain charge c q gd 6.2 turn-on delay time c t d(on) 13 20 rise time c t r v dd = 15 v, r l = 0.33 10 20 ns turn-off delay time c t d(off) i d 45 a, v gen = 10 v, r g = 2.4 50 100 ns fall time c t f 20 40 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 100 a diode forward voltage b v sd i f = 45 a, v gs = 0 v 1.0 1.5 v source-drain reverse recovery time t rr i f = 45 a, di/dt = 100 a/ s 55 100 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature.
sud45p03-15 siliconix vishay-siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-57253erev. f, 24-feb-98 siliconix was formerly a division of temic semiconductors 1-53 typical characteristics (25 c unless otherwise noted)
output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) on-resistance ( q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) r ds(on) ) v gs transconductance (s) g fs
25 c 125 c 5 v t c = 55 c v ds = 15 v i d = 45 a v gs = 10, 9, 8 v 6 v v gs = 10 v v gs = 4.5 v c rss t c = 55 c 25 c 125 c 2 v 3 v c oss c iss i d drain current (a) 4 v 7 v
siliconix sud45p03-15 vishay-siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-57253erev. f, 24-feb-98 siliconix was formerly a division of temic semiconductors 1-54 typical characteristics (25 c unless otherwise noted) on-resistance vs. junction temperature source-drain diode forward voltage (normalized) on-resistance ( t j junction temperature ( c) v sd source-to-drain voltage (v) r ds(on) ) source current (a) i s
100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 45 a t j = 25 c t j = 150 c 0 thermal ratings
safe operating area v ds drain-to-source voltage (v) drain current (a) i d 500 10 0.1 0.1 1 10 100 limited by r ds(on) 1 100 t a = 25 c single pulse normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 110 normalized effective transient thermal impedance maximum drain current vs. ambiemt temperature t a ambient temperature ( c) drain current (a) i d 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1 ms 10 ms 100 ms dc 10, 100 s 1 s 30
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